Semiconductor electron emission device

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Low workfunction layer for electron emission

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257101, 257472, 257476, 257481, 257484, 257492, 257493, 257605, 313302, 313305, 313309, 313346R, 313368, H01L 2947, H01L 29812, H01L 31108, H01L 3300

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active

057604177

ABSTRACT:
In a semiconductor electron emission device for causing an avalanche breakdown by applying a reverse bias voltage to a Schottky barrier junction between a metallic material or metallic compound material and a p-type semiconductor, and externally emitting electrons from a solid-state surface, a p-type semiconductor region (first region) for causing the avalanche breakdown contacts a p-type semiconductor region (second region) for supplying carriers to the first region, and a semi-insulating region is formed around the first region.

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G.G.P. van Gorkom et al., "Silicon cold cathodes," Philips Technical Review, vol. 43, No. 3, Jan. 1987, pp. 49-57.

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