Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Low workfunction layer for electron emission
Patent
1995-03-27
1998-06-02
Whitehead, Carl W.
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Low workfunction layer for electron emission
257101, 257472, 257476, 257481, 257484, 257492, 257493, 257605, 313302, 313305, 313309, 313346R, 313368, H01L 2947, H01L 29812, H01L 31108, H01L 3300
Patent
active
057604177
ABSTRACT:
In a semiconductor electron emission device for causing an avalanche breakdown by applying a reverse bias voltage to a Schottky barrier junction between a metallic material or metallic compound material and a p-type semiconductor, and externally emitting electrons from a solid-state surface, a p-type semiconductor region (first region) for causing the avalanche breakdown contacts a p-type semiconductor region (second region) for supplying carriers to the first region, and a semi-insulating region is formed around the first region.
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G.G.P. van Gorkom et al., "Silicon cold cathodes," Philips Technical Review, vol. 43, No. 3, Jan. 1987, pp. 49-57.
Kaneko Norio
Okunuki Masahiko
Tsukamoto Takeo
Watanabe Nobuo
Canon Kabushiki Kaisha
Tang Alice W.
Whitehead Carl W.
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