Semiconductor laser

Details Semiconductor laser Semiconductor laser

1980-12-03

1983-03-01

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 17, H01S 319

Patent

active

043756867

ABSTRACT:
A semiconductor laser includes an active layer of a first conductivity type comprising a strip-shaped active region formed by a doping of the second conductivity type over at least a part of the thickness of the active layer. According to the invention, the active region consists of a number of zones of the second conductivity type which are separated by material of the first conductivity type and which, viewed in the longitudinal direction of the active region, have a maximum dimension of at most 20 .mu.m. Upon ageing, crystal defects in the zones will not expand beyond the zones, thus extending the usable lifetime of the laser.

REFERENCES:
de Waard, "A Novel Single Mode Laser having Periodic Variations in the Stripe Width, `Super DFB`, ".

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