Evaluation method for semiconductor devices

Details Evaluation method for semiconductor devices Evaluation method for semiconductor devices

1996-11-25

1998-12-15

Brown, Glenn W.

Electricity: measuring and testing

Fault detecting in electric circuits and of electric components

Of individual circuit component or element

438 14, G01R 3126, H01L 2166, C23F 114

Patent

active

058501495

ABSTRACT:
A part of a gate insulation film between a semiconductor substrate and an exposed gate electrode of a semiconductor device is partially and stepwise etched away. A voltage is applied between the semiconductor substrate and the gate electrode in a chemical wet etching system at each step. An anode oxide film is formed on the surface of the gate electrode in a step, when a defect is included in a gate oxide film. The gate electrode is etched away in another step, when a defect is not included in the gate oxide film. A position of a defect in the gate insulation film is detected from the difference in the area of the gate insulation film when an anode oxide film is formed on the gate electrode, and when the gate electrode is etched away.

REFERENCES:
patent: 4462856 (1984-07-01), Abe et al.
patent: 5543334 (1996-08-01), Yoshii et al.
patent: 5670891 (1997-09-01), Ling et al.

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