Heterojunction bipolar transistor with buried selective sub-coll

Details Heterojunction bipolar transistor with buried selective sub-coll Heterojunction bipolar transistor with buried selective sub-coll

1996-06-24

1999-11-09

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

257586, 257773, H01L 2941, H01L 29737

Patent

active

059819855

ABSTRACT:
In an integrated heterojunction bipolar transistor (HBT) with minimized base-collector capacitance, a sub-collector region is formed as a mesa on a substrate, a collector contact is to the sub-collector mesa region, a lightly-doped collector region and a base region extend from the mesa onto the substrate, and a base contact and its via hole for interconnection are off the mesa, with minimal overlap with the sub-collector region. The latter may be termed a buried selective sub-collector (BSSC) region. Such transistors can be used as integrated switching devices and microwave devices, e.g., in wireless communications, satellite direct broadcast systems, automobile collision avoidance systems, global positioning systems, and other high-frequency applications.

REFERENCES:
patent: 5140399 (1992-08-01), Kawai
patent: 5286997 (1994-02-01), Hill
patent: 5508536 (1996-04-01), Twynam et al.
M.R. Frei et al., "Selective Growth of InGaAs/InP Heterojunction Bipolar Transistors With a Buried Subcollector," Appl. Phys. Lett 61, 1992, pp. 1193-1195.
M. Ho et al., "High Performance Low-Base-Collector Capacitance A1GaAs/GaAs Heterojunction Bipolar Transistors . . . ", IEEE Electron Device Letters 16, 1995, pp. 512-514.

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