Integrated circuit device fabrication by plasma etching

Details Integrated circuit device fabrication by plasma etching Integrated circuit device fabrication by plasma etching

1995-09-21

1998-06-02

Breneman, R. Bruce

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438719, 216 67, H01L 2100

Patent

active

057599211

ABSTRACT:
An anisotropic etching process is disclosed in which two sources of process gas are provided to a plasma reactor having at least three electrodes. In a plasma, the first process gas provides etchant species which are reactive with a substrate and the second process gas provides barrier species which protect trench sidewalls from reaction with the etchant species. For etching silicon, the first process gas may be chlorine, chloro-trifluoromethane, oxygen, etc., and the second process gas may be C.sub.2 F.sub.6, SF.sub.6, BCl.sub.3, or other compound that either combines with etchant species on a trench sidewall or forms a protective polymer film on such trench sidewall. A disclosed plasma reactor includes a grounded first electrode which forms part of the reactor's enclosure, a coiled second electrode disposed above and separated from the reactor enclosure by a dielectric shield, and a planar third electrode located below the substrate to be etched. A plasma is generated by providing radio frequency energy from the second electrode to the enclosure interior. The charged species from that plasma are directed to the substrate by applying a bias between the first and third electrodes.

REFERENCES:
patent: 5277751 (1994-01-01), Ogle
patent: 5401350 (1995-03-01), Patrick et al.

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