Apparatus for plasma-supported back etching of a semiconductor w

Details Apparatus for plasma-supported back etching of a semiconductor w Apparatus for plasma-supported back etching of a semiconductor w

1996-12-02

2000-01-11

Breneman, Bruce

Coating apparatus

Gas or vapor deposition

Work support

118723R, 156345, C23C 1600

Patent

active

060131365

ABSTRACT:
A method for the manufacture of highly-integrated circuits on a semiconductor substrate includes applying coatings to front and back sides of a wafer of semiconductor material in at least one deposition process, and subsequently removing the coating on the back of the wafer by etching being carried out with the front of the wafer being free of lacquer. The etching is performed in a process chamber in which reactive particles produced in a plasma only reach the back of the wafer, while advances of the reactive particles toward the front of the wafer are prevented by a protective neutral gas.

REFERENCES:
patent: 4350562 (1982-09-01), Bonu 156639
Patents Abstracts of Japan, vol. 134 E 115: JP-A-3-228321 (NEC) Oct. 9, 1991.
Patents Abstracts of Japan, E-1368 May 20, 1993, vol. 17, No. 257: JP-A-5-3176 (NEC) Jan. 8, 1993.
Patents Abstracts of Japan, E-1133 Mar. 18, 1993, vol. 17, No. 128: JP-A-4-302422 (NEC) Oct. 26, 1992.
Patents Abstracts of Japan, E-1173 Mar. 4, 1992, vol. 16, No. 88: JP-A-3-272140 (Fujitsu) Dec. 3, 1991.
Patents Abstracts of Japan, vol. 60 E 1520: JP-A-5-326453 Dec. 10, 1992.
Patent Abstract of Japan No. 63/202922 (A) Yanabe Aug. 22, 1988.
Patent Abstract of Japan No. 63/94630 (A) Tsuji Apr. 25, 1988.
Research Disclosure Publ. Feb. 1986, No. 26238, p. 98, Backside Etch of Silicon Nitride on Device . . . .
"Etching of Thin SiO.sub.2 layers using wet HF Gas" (Van der Heide et al.), 8257 Journal of Vacuum Science & Technology, May/Jun. 1989, No. 3, Part II, New York, pp. 1719-1723.
Patent Abstract of Japan No. 0 531 5300 (Yasayuki), dated Nov. 26, 1994.
Patent Abstract of Japan No. 0 322 8321 (Tsuneo), dated Oct. 9, 1991.

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