Production of heavily-doped silicon

Details Production of heavily-doped silicon Production of heavily-doped silicon

1998-08-19

2000-01-11

Garrett, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

104108, 104935, C30B 1520

Patent

active

060131292

ABSTRACT:
Provided is a method for the production of a heavily-doped silicon wherein an element X whose ionic radius is larger than Si and an element Y whose ionic radius is smaller than Si are added to a Si crystal growing atmosphere at an atomic ratio of X:Y=1:(1+.alpha.) or X:Y=(1+.alpha.):1 with the proviso of .alpha. being a value of 1-5. When Si is double-doped with the elements X and Y, the number of carriers is increased up to 10.sup.20 -10.sup.22 /cm.sup.3. The double-doping may be adaptable to any of a pull method, an epitaxy method or a selective diffusion method. The double-doping remarkably increases the number of carriers, so as to produce metallic Si which can be useful itself as a wiring material due to its low resistivity.

REFERENCES:
patent: 5100832 (1992-03-01), Kitagawajetah et al.
patent: 5169798 (1992-12-01), Eoigleshamjetah et al.
patent: 5190891 (1993-03-01), Yokotsukajetah et al.

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