Method for patterning submicron openings using an image reversal

Details Method for patterning submicron openings using an image reversal Method for patterning submicron openings using an image reversal

1990-08-20

1991-06-18

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 31, 437 40, 437 41, 437238, 437241, 148DIG105, 148DIG147, 156652, 156644, H01L 21465

Patent

active

050249711

ABSTRACT:
The invention provides a method for patterning a submicron opening in a layer of semiconductor material. The method comprises use of conventional photolithography to position a sidewall spacer in a predetermined location on a semiconductor device. A layer of cobalt is selectively reacted with an underlying layer to form an image reversal layer which functions as a hard mask. The submicron features are then transferred into the underlying layer of semiconducting material by etching.

REFERENCES:
patent: 4378627 (1983-04-01), Jambotkar
patent: 4455738 (1984-06-01), Houston et al.
patent: 4472872 (1984-09-01), Toyoda et al.
patent: 4689869 (1987-09-01), Jambotkar
patent: 4735681 (1988-04-01), Alvarez
patent: 4784718 (1988-11-01), Mitani et al.
patent: 4855247 (1989-08-01), Ma et al.
C. Johnson et al., "Method of Making Submicron Dimensions in Structures Using Sidewall Image Transfer Techniques", IBM Technical Disclosure Bulletin, vol. 26, No. 9, Feb. 1984, pp. 4587-4589.

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