Method of making single poly memory cell

Details Method of making single poly memory cell Method of making single poly memory cell

1983-04-18

1984-12-11

Weisstuch, Aaron

Metal working

Method of mechanical manufacture

Assembling or joining

29571, 29578, H01L 2180

Patent

active

044869444

ABSTRACT:
A single polycrystalline silicon configuration for a memory cell in a static MOS RAM and a method of fabricating the same are described. Three conductivity regions are utilized to form each memory cell. A first conductivity region is formed in the substrate to create a buried ground line and sources and drains of transistors. A second conductivity region is formed within an insulation layer and above the first conductivity region to create a word line, gate regions of the transistors, load resistors, and a power supply line. The power supply line is oriented directly above and parallel to the ground line. A third conductivity region is formed on the surface of the insulation layer to create data lines. The number of process steps and the size of the memory cell are reduced by this configuration.

REFERENCES:
patent: 4110776 (1978-08-01), Rao et al.
patent: 4207585 (1980-06-01), Rao
patent: 4240097 (1980-12-01), Raymond, Jr.
patent: 4246593 (1981-01-01), Bartlett

Affiliated with

Also associated with

Rating

Method of making single poly memory cell does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making single poly memory cell, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making single poly memory cell will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1456450