Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1983-03-24
1984-12-11
Saba, William G.'
Metal working
Method of mechanical manufacture
Assembling or joining
29576W, 29577C, 29578, 29591, 148174, 148187, 148188, 156653, 156657, 156662, 357 43, 357 49, 357 50, H01L 2176, H01L 21441
Patent
active
044869428
ABSTRACT:
A method of manufacturing a semiconductor integrated circuit of the BI-MOS type on a common semiconductor substrate comprising forming an oxide film by thermal oxidation to isolate the elements and a base layer of one conductivity type by a surrounding dielectric followed by removing the oxide film from emitter and collector electrode extending regions. A silicon film of a second conductivity type is formed by patterning and used to form an emitter layer and a collector extending layer by differing impurities from the silicon film. Patterning is then employed to form gate, emitter and collector electrodes. Finally, the mask for the silicon film is used to form a base electrode extending layer, a source layer and a drain layer of the first conductivity type and of high impurity density.
REFERENCES:
patent: 3767487 (1973-10-01), Steinmaier
patent: 3999213 (1976-12-01), Brandt et al.
patent: 4041518 (1977-08-01), Shimizu et al.
patent: 4151631 (1979-05-01), Klein
patent: 4299024 (1981-10-01), Piotrowski
Mitsubishi Denki & Kabushiki Kaisha
Saba William G.
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