Method for chemical-mechanical planarization of stop-on-feature

Details Method for chemical-mechanical planarization of stop-on-feature Method for chemical-mechanical planarization of stop-on-feature

Filed on

1999-04-07

Date issued

1999-11-09

Examiner

Powell, William

Patent Class

Semiconductor device manufacturing: process

SubClass

Chemical etching

SubSubClass

Combined with the removal of material by nonchemical means

Other Related Categories

438693, 216 38, 216 88, 216 89, H01L 2100

Type

Patent

Status

active

Patent number

059813962

Description

ABSTRACT:
The present invention is a method for chemical-mechanical planarization of semiconductor wafers that is highly useful for planarizing stop-on-feature design wafers. Initially, the wafer is positioned against a liquid solution over a planarizing surface of a polishing pad. At least one of the wafer or the pad is moved with respect to the other at a relatively low velocity to maintain a substantially continuous film of liquid solution between the wafer and the pad. The temperature of a pad platen is also controlled to maintain a relatively low temperature of the liquid solution at which the solution is highly selective to a layer of material on the wafer.

REFERENCES:
patent: 4910155 (1990-03-01), Cote et al.
patent: 5232875 (1993-08-01), Tuttle et al.
patent: 5300155 (1994-04-01), Sandhu et al.

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