Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal
Patent
1997-09-12
1999-11-09
Bowers, Charles
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
438 99, 257 40, 313506, H01L 5140
Patent
active
059813067
ABSTRACT:
A method is disclosed for fabricating organic light emitting devices (OLEDS) containing an indium tin oxide (ITO) layer that is deposited onto a fragile layer. The ITO layer is fabricated using a low, non-damaging, ITO deposition rate until a protective ITO layer is formed, at which point the ITO deposition rate is increased to a substantially higher deposition rate without causing damage to the underlying layers. OLEDs fabricated using the accelerated ITO deposition rate could be made with I-V characteristics having no practically discernible difference from the I-V characteristics of an OLED in which the ITO deposition rate was kept at a low deposition rate throughout the ITO deposition process.
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Burrows Paul
Forrest Stephen R.
Shen Zilan
Bowers Charles
Christianson Keith
The Trustees of Princeton University
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