Method of making field emitters with porous silicon

Details Method of making field emitters with porous silicon Method of making field emitters with porous silicon

1997-07-17

1999-11-09

Chaudhari, Chandra

Semiconductor device manufacturing: process

Electron emitter manufacture

H01L 21306

Patent

active

059813032

ABSTRACT:
A process is provided for forming sharp asperities, useful as field emitters. The process comprises: patterning and doping a silicon substrate. The doped silicon substrate is anodized. The anodized area is then used for field emission tips. The process of the present invention is also useful for low temperature sharpening of tips fabricated by other methods. The tips are anodized, and then exposed to radiant energy, and the resulting oxide is removed.

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