Process protection for individual device gates on large area MIS

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357 51, H01L 2978

Patent

active

045996393

ABSTRACT:
Gates of individual devices on a slice are connected through a resistance to the device substrate, and through the same resistance to other device gates. This interconnection and high-resistance drain gives the gate protection from static charge buildup and subsequent catastrophic discharge which would result in a faulty device. This method protects each gate from the time of deposition to final device packaging.

REFERENCES:
patent: 3676742 (1972-07-01), Russel et al.
patent: 4202001 (1980-05-01), Reichert et al.
patent: 4261004 (1981-04-01), Masuhara et al.
patent: 4426658 (1984-01-01), Gontowski
IBM Technical Disclosure Bulletin, vol. 19, #4, Sep. 1976 "Monolithic Integrated Circuit Fuse Link" by Deliduka et al.

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