Semiconductor apparatus having a zener diode integral with a res

Details Semiconductor apparatus having a zener diode integral with a res Semiconductor apparatus having a zener diode integral with a res

1983-10-05

1986-07-08

Clawson, Jr., Joseph E.

357 20, 357 34, 357 51, 357 86, H01L 2990

Patent

active

045996318

ABSTRACT:
A semiconductor apparatus includes a p.sup.+ -type region formed in the surface area of an n.sup.- -type semiconductor layer formed on a p-type semiconductor substrate, and an n.sup.+ -type region which is formed in a contact relationship with respect to the p.sup.+ -type region and forms a Zener diode in conjunction with the p.sup.+ -type region. A p-type region is further formed in the surface area of the semiconductor layer and is electrically connected to the n.sup.+ -type region by a contact layer. The n.sup.+ -type region forms a resistor between the contact layer and the p.sup.+ -type region. The p-type region, semiconductor layer and substrate constitute a pnp transistor.

REFERENCES:
patent: 4080616 (1978-03-01), Horie
patent: 4100561 (1978-07-01), Ollendorf
patent: 4258311 (1981-03-01), Tokuda et al.
patent: 4267557 (1981-05-01), Muramoto et al.
patent: 4451839 (1984-05-01), Nelson

Affiliated with

Also associated with

Rating

Semiconductor apparatus having a zener diode integral with a res does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor apparatus having a zener diode integral with a res, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor apparatus having a zener diode integral with a res will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1454567