Method of manufacturing a read only semiconductor memory device

Details Method of manufacturing a read only semiconductor memory device Method of manufacturing a read only semiconductor memory device

1988-10-11

1990-01-09

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG109, 357 41, 357 45, 437 41, 437 48, 437913, H01L 2170, H01L 2100

Patent

active

048928410

ABSTRACT:
A semiconductor memory device is formed of a polycrystalline silicon electrode terminal layer, which is formed on a MOS transistor except over the gate region and is connected to the drain region of the MOS transistor, and metal wire layer, which is formed on the MOS transistor except over the gate region and is connected to the electrode terminal layer to transmit output signals. Data is written into the semiconductor memory device by ion implantation of the gate of the MOS transistor after the metal wire layer is formed.

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