Photovoltaic element with zno layer having increasing fluorine c

Details Photovoltaic element with zno layer having increasing fluorine c Photovoltaic element with zno layer having increasing fluorine c

1996-04-26

1998-12-15

Codd, Bernard P.

Batteries: thermoelectric and photoelectric

Photoelectric

Cells

136256, 136258, 136261, H01L 310264, H01L 310392, H01L 31036

Patent

active

058491082

ABSTRACT:
A photovoltaic element has a substrate with a conductive surface, a zinc oxide layer containing fluorine and a non-single-crystal semiconductor layer, where the fluorine content of the zinc oxide layer (i) varies across the thickness of the layer, (ii) is at a minimum at the interface with the substrate and (iii) increases toward the semiconductor layer.

REFERENCES:
patent: 4400409 (1983-08-01), Izu et al.
patent: 4990286 (1991-02-01), Gordon
patent: 5397920 (1995-03-01), Tran
patent: 5429685 (1995-07-01), Saito et al.
Abstract--JP 05-259,692 Kariya et al. May 2, 1995.
Hattori, et al. "High-Conductive Wide Band Gap P-Type a-SiC:H Prepared By ECR CVD and Its Application To High Efficiency a-Si Basis Solar Cells", 19th IEEE Photovoltaic Specialists Conf., pp. 689-694 (1987).

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