Apparatus for producing polycrystalline semiconductors

Details Apparatus for producing polycrystalline semiconductors Apparatus for producing polycrystalline semiconductors

1996-12-10

1998-12-15

Garrett, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Apparatus

For crystallization from liquid or supercritical state

117 19, 117224, C30B 3500

Patent

active

058490809

ABSTRACT:
A process and an apparatus for producing a polycrystalline semiconductor including charging a raw semiconductor material into a crucible, heating to melt the raw semiconductor material in the crucible by heating means, solidifying the melted material while depriving the bottom of the crucible of heat, and then cooling the crucible to cool the solidified semiconductor, in an atmosphere inert to the semiconductor throughout, characterized by alternately subjecting the semiconductor crystal to growth and annealing in the solidification step while periodically varying the amount of heat liberated from the raw semiconductor material.

REFERENCES:
patent: 3615205 (1971-10-01), Blue et al.
patent: 3628998 (1971-12-01), Blum et al.
patent: 3898051 (1975-08-01), Schmid
patent: 4050905 (1977-09-01), Swinehart
patent: 4055457 (1977-10-01), Swinehart
patent: 4175610 (1979-11-01), Zaubar et al.
patent: 5714004 (1998-02-01), Okuno
"Convective Interference and `Effective Diffusion-Controlled Segregation during Directional Solidification under Stabilizing Vertical Thermal Gradients; Ge`" by D. Holmes et al., J. Electrochemical Society: Solid-State Science and Technology Feb. 1981 pp. 429-437.

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