Cooling system and method for epitaxial barrel reactor

Details Cooling system and method for epitaxial barrel reactor Cooling system and method for epitaxial barrel reactor

1996-07-26

1998-12-15

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With a step of measuring, testing, or sensing

117 86, 117201, 117202, 118724, C30B 2510

Patent

active

058490760

ABSTRACT:
Barrel reactor apparatus for chemical vapor deposition of a material on a semiconductor wafer having a cooling system which protects the semiconductor wafers from metals contamination caused by degradation of metallic surfaces of the barrel reactor. Degradation is caused by water reacting with other substances (e.g., HCl) in the barrel reactor. The cooling system has a controller which monitors the operational state of the barrel reactor and selects an operating setpoint based on the detected operational condition. As a result, the metallic surfaces of the barrel reactor are kept cool during operation to retard corrosive chemical reaction rates, and kept warmer than would be otherwise possible when the barrel reactor is not operating to prevent adsorption of water by and condensation of water onto the metallic surfaces.

REFERENCES:
patent: 4579080 (1986-04-01), Martin et al.
patent: 5314541 (1994-05-01), Saito et al.
patent: 5364488 (1994-11-01), Minato et al.
patent: 5578132 (1996-11-01), Yamaga et al.
Barrel Reactor Cooling System (written description) No Date.

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