Method for making improved contact for integrated circuit struct

Details Method for making improved contact for integrated circuit struct Method for making improved contact for integrated circuit struct

1986-04-03

1987-11-17

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 52, 437195, 437194, 357 236, H01L 2176

Patent

active

047074574

ABSTRACT:
An improved contact construction for an integrated circuit structure having closely spaced electrodes adjacent the contact is disclosed. The integrated circuit structure having the improved contact comprises a substrate having an insulating layer thereon, a first conductive layer over the insulating layer, and a second insulating layer formed over the first conductive layer. A self-aligned contact opening is formed through the second insulating layer, the underlying first conductive layer, and the first insulating layer to expose the substrate. A layer of insulating material is then formed on the sidewalls of the opening to cover the exposed edges of the first conductive layer. Conductive material is then placed in the self-aligned contact opening and a second conductive layer is formed over the second insulating layer whereby the conductive material placed in the self-aligned contact opening electrically connects the substrate with the second conducting layer.

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"A Half Micron MOSFET Using Double Implanted LDD", Seiki Ogura, IEDM Tehnical Digest, International Electron Device Meeting, 1982, pp. 718-721.

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