Patent
1975-09-08
1977-10-18
Edlow, Martin H.
H01L 2972
Patent
active
040548970
ABSTRACT:
A transistor has an emitter region embedded into a surface zone of the adjacent base region and shaped as a mesh-grid structure in whose many meshes a number of respective base portions emerge at the surface, each of these base portions being individually surrounded by the mesh configuration. The just-mentioned surface is coated with an insulating film, such as a coating of silicon dioxide, which has openings above the emitter mesh grid as well as above the base portions. Two mutually insulated metal layers, preferably of vapor-deposited aluminum, overlay the insulating film and are in ohmic contact with the emitter and the base through the openings. The two metal layers serve as base electrode and emitter electrode respectively. The collector region adjacent to the base region on the side of the latter facing away from the emitter either has uniform resistivity throughout or has a zone of relatively high resistivity at the emitter region and another zone of low resistivity away from the emitter region. The mesh-grid design of the embedded emitter region improves the high-frequency high-power ability of the device.
REFERENCES:
patent: 3457631 (1969-07-01), Hall et al.
patent: 3922706 (1975-11-01), Kaiser
Edlow Martin H.
Fujitsu Ltd.
Lerner Herbert L.
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