Method of making MOSFET by multiple implantations followed by a

Details Method of making MOSFET by multiple implantations followed by a Method of making MOSFET by multiple implantations followed by a

1984-09-24

1986-07-08

Roy, Upendra

Metal treatment

Compositions

Heat treating

29571, 29576B, 148187, 148DIG82, 357 234, 357 91, H01L 21265, H01L 21308

Patent

active

045991189

ABSTRACT:
A short channel metal oxide semiconductor transistor device is processed without undesirable short channel effects, such as V.sub.T falloff and with a reasonable source-drain operating voltage support. In a substrate lightly doped with P-type conductivity material and source and drain region heavily doped with an N-type conductivity material, two lightly doped N- regions are disposed between the edge of the gate and the source and drain regions. A channel region is more heavily doped with P-type material than the substrate. Two regions extend from opposite sides of the channel region to an area generally below the two N- regions and above the substrate, which regions are more heavily doped than the channel regions.

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