Method for electrolytically etching semiconductor material

Details Method for electrolytically etching semiconductor material Method for electrolytically etching semiconductor material

1976-09-29

1977-10-18

Mack, John H.

Chemistry: electrical and wave energy

Processes and products

Electrostatic field or electrical discharge

2041293, C25F 312

Patent

active

040544974

ABSTRACT:
A method of etching a submerged semiconductor material structure in which an electrically connected metal mask is utilized to electrolytically etch a semiconductive substrate without damaging the remainder of the structure.

REFERENCES:
patent: 3483108 (1969-12-01), Schaeffer
patent: 3640807 (1972-02-01), VanDijk
patent: 3776788 (1973-12-01), Henker
patent: 3853650 (1974-12-01), Hartlaub

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