Method of forming local interconnection of a static random acces

Details Method of forming local interconnection of a static random acces Method of forming local interconnection of a static random acces

1997-04-17

1999-11-09

Tsai, Jey

Railways: surface track

Ties

Cross section

438649, 438655, 438227, 438232, H01L 218244

Patent

active

059797843

ABSTRACT:
A method of forming local interconnection of a SRAM, including the following steps: First, an NMOS and a PMOS are formed on a P-well and an N-well on a substrate, respectively. An isolation oxide layer is formed and the isolation oxide layer on a node is removed. A thin polysilicon layer is formed and N+ shallow implantation and N+ deep implantation is performed by using a photolithography technique. Also, P+ shallow implantation and P+ deep implantation are performed by using a photolithography technique. After the formation of a low resistance material, the low resistance material and the thin polysilicon layer are together formed.

REFERENCES:
patent: 5341014 (1994-08-01), Fujii et al.
patent: 5635426 (1997-06-01), Hayashi et al.

Affiliated with

Also associated with

Rating

Method of forming local interconnection of a static random acces does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming local interconnection of a static random acces, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming local interconnection of a static random acces will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1445315