Schottky-barrier diode radiant energy detector with extended lon

Details Schottky-barrier diode radiant energy detector with extended lon Schottky-barrier diode radiant energy detector with extended lon

1981-08-25

1985-10-01

James, Andrew J.

357 15, 357 89, 357 91, H01L 2714, H01L 2948, H01L 3100, H01L 2956

Patent

active

045449392

ABSTRACT:
The upper limit of longer wavelength response of a radiation detector using a Schottky-barrier diode operated in hot carrier mode is extended by a layer of relatively high concentration impurities ion implanted in Schottky barrier contact surface of the semiconductive region of the diode.

REFERENCES:
patent: 3964084 (1976-06-01), Andrews, Jr. et al.
patent: 4045248 (1977-08-01), Shannon et al.
patent: 4046609 (1977-09-01), Digoy
patent: 4089020 (1978-05-01), Ikeda et al.
patent: 4149174 (1979-04-01), Shannon
R. Taylor et al., "Improved Platinum Silicide IRCCD Focal Plane", SPIE, Advances in Focal Plane Technology, vol. 217, (1980), pp. 103-110.
A. Rusu et al., "The Metal-Overlap Laterally-Diffused (MOLD) Schottky Diode", Solid-State Electronics, vol. 20, (1977), pp. 489-506.
J. M. Shannon, "Control of Schottky Barrier Height Using Highly Doped Surface Layers", Solid-State Elecronics, vol. 19, (1976), pp. 537-543.

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