Wavelength-selective photodetector

Details Wavelength-selective photodetector Wavelength-selective photodetector

1982-11-18

1985-10-01

Edlow, Martin H.

357 16, H01L 2714, H01L 29161

Patent

active

045449384

ABSTRACT:
A heterojunction photodiode with improved wavelength-selectivity and risetime. The problem of short-wavelength diffusion-tail response is avoided by interposing between the window and active layers a barrier layer of higher bandgap than that of the window layer, which prevents high-energy photocarriers generated in the window layer from diffusing to the PN junction. In one embodiment, n-type substrate, active, barrier, and window layers are initially grown, and the window layer is coated with an opaque oxide. A window is opened in the oxide layer, and a p-type dopant is diffused heavily through the opening, through the window layer, and partly into the barrier layer. A PN junction is thus formed in the barrier layer, its depletion region extending through the remaining n-type region of the barrier layer and into the active layer, where photocarriers are generated by photons passing through the window-opening.

REFERENCES:
patent: 3727115 (1973-04-01), Shang
patent: 3812516 (1974-05-01), Hayashi
patent: 4122476 (1978-10-01), Hovel et al.
patent: 4207122 (1980-06-01), Goodman
patent: 4328508 (1982-05-01), Kressel et al.
patent: 4427841 (1984-01-01), Rahilly
Hovel, IBM Technical Disclosure Bulletin, vol. 5, No. 12, May 1973, p. 3741 and vol. 15, No. 11, Apr. 1973, p. 3443.

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