Impurity band conduction semiconductor devices

Details Impurity band conduction semiconductor devices Impurity band conduction semiconductor devices

1983-09-15

1986-04-29

James, Andrew J.

357 89, 357 63, 357 83, 357 1, 357 4, 357 6, 357 33, H01L 2912

Patent

active

045860742

ABSTRACT:
A semiconductor diode is designed to operate at a temperature where the thermal generation of free charge carriers is negligible. The diode includes a first semiconducting layer with a sufficient concentration of first conductivity type impurities to exhibit metallic type conductivity, a second semiconducting layer with a sufficient first conductivity type concentration to create an impurity energy band and with a second conductivity type impurity concentration less than half the first, and a blocking layer between the first and second layers with a sufficiently low impurity concentration that substantially no charge transport can occur by an impurity conduction mechanism. First and second ohmic contacts are deposited on the first and second layers opposite the blocking layer. The same types of layers are used to construct transistors.

REFERENCES:
patent: 3356866 (1967-12-01), Misawa
patent: 3822153 (1974-07-01), Loach, Jr. et al.
patent: 3886579 (1975-05-01), Ohuchi et al.
patent: 4083062 (1978-04-01), Ohuchi et al.
patent: 4127861 (1978-11-01), Deneuville
patent: 4410902 (1983-10-01), Malik
Brobsky et al, "Light-Sensitive Thin-Film Metal Base Transistor", IBM Technical Disclosure Bulletin, vol. 20, No. 9, Feb. 1978, pp. 3731-3734.
Bratt, Impurity Germanium and Silicon Infrared Detectors, in Semiconductors and Semimetals, vol. 12, p. 85 (R. K. Willardson, Ed. 1977).
Efros, et al., Impurity Conductivity in Low Compensated Semiconductors, Phys. Stat. Sol. (b), vol. 50, p. 45 (1972).
Kasuya, A Theory of Impurity Conduction I, J. Phys. Soc. Japan, vol. 13, p. 1096 (1958); Kasuya, et al., A Theory of Impurity Conduction II, J. Phys. Soc. Japan, vol. 13, p. 1287 (1958).
Miller, et al., Impurity Conduction at Low Concentrations, Phys. Rev., vol. 120, p. 745 (1960).
Mott, The Metal-Insulator Transition in Extrinsic Semiconductors, Adv. Phys., vol. 21, p. 785 (1972).
Mott, et al., The Model and General Discussion of Impurity Conduction, in Theory of Impurity Conduction, Adv. Phys., vol. 10, p. 110 (1961).
Van Lien, et al., Activation Energy of Hopping Conduction in Heavily Doped Semiconductors, Sov. Phys. Semicond., vol. 13, p. 1281 (1979).

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