Bipolar transistor with floating guard region under extrinsic ba

Details Bipolar transistor with floating guard region under extrinsic ba Bipolar transistor with floating guard region under extrinsic ba

1992-02-10

1993-06-22

Larkins, William D.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

257488, 257495, 257592, H01L 2973

Patent

active

052218562

ABSTRACT:
A first device region (10) of one conductivity type adjacent one major surface (1a) of a semiconductor body (1) has a relatively highly doped subsidiary region (11) spaced from the one major surface (1a) by a relatively lowly doped subsidiary region (12). A second device region (20) of the opposite conductivity type within the subsidiary region (12) has an intrinsic subsidiary region (21) and an extrinsic subsidiary region (23,24) surrounding the intrinsic subsidiary region (21) forming respective first and second pn junctions (22,25) with the relatively lowly doped subsidiary region (12). A third device region (30) of the one conductivity type is formed within the intrinsic subsidiary region (21) surface (1a). An additional region (60,60',61,62) is provided beneath the extrinsic subsidiary region (23,24) so as to lie within the spread of the depletion region (250) associated with the second pn junction (25) when the first and second pn junction (22,25) are reverse-biassed thereby extending the depletion region (250) beneath the emitter region (30) to cause an increase in the Early voltage (V.sub.eaf) of the device.

REFERENCES:
patent: 4377816 (1983-03-01), Sittig
patent: 4706378 (1987-11-01), Havemann
patent: 4969026 (1990-11-01), Van der Velden et al.
patent: 4980748 (1990-12-01), Hozumi et al.
patent: 4984053 (1991-01-01), Kayanuma

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