Heterostructure bipolar transistor

Details Heterostructure bipolar transistor Heterostructure bipolar transistor

1984-05-11

1986-04-29

James, Andrew J.

357 15, 357 16, H01L 2972

Patent

active

045860718

ABSTRACT:
A heterojunction bipolar transistor having an ohmic contact at the intersection of the base and an adjacent region serving as emitter or collector that forms an ohmic contact to the base and a Schottky barrier to the adjacent emitter or collector. A GaAs-GaAlAs device with a platinum or palladium electrode over the intersection between collector and base and forming an ohmic contact to a p-base region and a Schottky barrier with an n-collector region thereof.

REFERENCES:
patent: 3780359 (1973-12-01), Dumke et al.
patent: 3938243 (1976-02-01), Rosvold
patent: 3943554 (1976-03-01), Russell et al.
patent: 4005469 (1977-01-01), Chang
patent: 4379005 (1983-04-01), Hovel et al.
patent: 4443808 (1984-04-01), Kihara
IBM TDB, vol. 17, No. 6, Nov. 1974, pp. 1814-1816, "Contact Barriers to Semiconductor Crystals", by M. H. Brodsky.
IEEE International Solid State Circuits Conference, Session XIV, Schottky Transistor Logic, Berger and Weidmann.
IBM TDB, vol. 14, No. 4, Sep. 1971, pp. 1248-1249, "GaAs Field-Effect Transistors with Self-Registered Gates", by Dumke et al.

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