Intermetallic semiconductor ohmic contact

Details Intermetallic semiconductor ohmic contact Intermetallic semiconductor ohmic contact

1984-06-14

1986-04-15

Edlow, Martin H.

357 63, H01L 2348, H01L 29167

Patent

active

045831106

ABSTRACT:
A 10.sup.-6 ohm cm.sup.2 ohmic contact is provided by formation of a 20-50 Angstroms deep surface region with a net donor density of higher than 5.times.10.sup.19 /cc. An amphoteric dopant of Si or Ge is incorporated in a pinned Fermi level condition so that an enhanced surface donor concentration occurs.

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