Photodetector with isolated avalanche region

Details Photodetector with isolated avalanche region Photodetector with isolated avalanche region

1984-09-14

1986-04-29

Davie, James W.

357 13, 357 56, H01L 2714, H01L 3100

Patent

active

045860670

ABSTRACT:
The invention relates to an avalanche photodetector having a charge-multiplication region which is spatially separated from the detector surfaces. This photodetector includes an absorptive region, a first region overlying the absorptive region and having a higher concentration zone and a surrounding peripheral zone and a second region overlying the first region. The high electric field in the avalanche region is then restricted to the higher conductivity central zone thereby reducing the electric field at the detector surfaces when a reverse-bias voltage sufficient to produce avalanche multiplication is applied to the detector.

REFERENCES:
patent: 4116733 (1978-09-01), Olsen et al.
patent: 4442444 (1984-04-01), Osaka
patent: 4471370 (1984-09-01), Chen et al.
patent: 4473835 (1984-09-01), Forrest et al.
patent: 4481523 (1984-12-01), Osaka et al.
Nishida et al. Applied Physics Letters 35, 251 (1979).
Olsen et al. Journal of Electronic Materials 9, 977 (1980).

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