Solid-state image sensor

Details Solid-state image sensor Solid-state image sensor

1984-08-27

1986-04-15

Nelms, David C.

Radiant energy

Photocells; circuits and apparatus

Optical or pre-photocell system

357 32, H01J 4014

Patent

active

045830037

ABSTRACT:
A solid-state image sensor comprises photo sensors (110 to 114, 211 to 214 and 311 to 314), transfer gates (121 to 124, 221 to 224 and 321 to 324), vertical charge transferring elements (130, 230 and 330), interfacing portions (140, 240 and 340), horizontal CCD (500) and a clock signal source (800). Each of the vertical charge transferring elements (130, 230 and 330) has a plurality of gate electrodes under which the respective channels are formed, each with a potential barrier provided for separating the channel from the adjacent channel. A plurality of potential wells separated by said plurality of potential barriers are formed in the vertical charge transferring elements in response to clock signals applied from said clock signal source to said gate electrodes. Transfer of the signal charge provided by the photo sensor to the vertical charge elements is performed by controlling the clock signals applied to the gate electrodes so as to remove the potential well successively toward the moving direction of the charge.

REFERENCES:
patent: 4179711 (1979-12-01), Nagumo
patent: 4447735 (1984-05-01), Horii
patent: 4504848 (1985-03-01), Matsumoto et al.
"Visible and Infrared Solid-State Image Sensors", I E D M 83-1, pp. 1-7, by Walter F. Kosonocky, (1983).

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