Method of making a field-effect transistor

Details Method of making a field-effect transistor Method of making a field-effect transistor

1991-12-17

1993-06-22

Thomas, Tom

Fishing, trapping, and vermin destroying

437 41, 437 44, H01L 2170

Patent

active

052216357

ABSTRACT:
A field-effect transistor (10, FIG. 2) possesses improved electrostatic discharge characteristics. The transistor (10), formed in a p-type semiconductor substrate, comprises a gate (16) that forms a channel between two adjacent n-regions (12 and 14). At least one of the n-regions (12) has an n-well (22) below and centered about a contact pad (18). The n-well (22) has a second lower concentration of n-type impurities than either of the n-regions.

REFERENCES:
patent: 4052229 (1977-10-01), Pashley
patent: 4382826 (1983-05-01), Pfleiderer et al.
patent: 4808544 (1989-02-01), Matsui
patent: 4868138 (1989-09-01), Chan et al.
patent: 4956311 (1990-11-01), Liou et al.
patent: 4981810 (1991-01-01), Fazan et al.

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