Dual bank memory and systems using the same

Static information storage and retrieval – Addressing – Plural blocks or banks

Patent

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Details

36523002, 36523005, 365236, 36518901, 36523009, G11C 804

Patent

active

055068103

ABSTRACT:
Memory circuitry 200 is provided which includes first and second banks of memory cells 201a, 201b arranged in rows and columns. Row decoder circuitry 210 is included for selecting a row in at least one of the memory banks 201 in response to a row address. Row address circuitry 208, 209, 215 is provided for presenting a sequence of the row addresses to the row decoder circuitry 210 in response to a single row address provided at an address port to memory circuitry 200. Column decoder circuitry 213 is further included for selecting a column in each of the banks 201 in response to a column address. Column address circuitry 211, 212, 215 presents a sequence of the column addresses to the column decoder circuitry 213 in response to a single column address received at the address port to memory circuitry 200.

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patent: 5287485 (1994-02-01), Umina et al.
patent: 5390139 (1995-02-01), Smith et al.

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