Method of making a special purity silicon nitride powder

Details Method of making a special purity silicon nitride powder Method of making a special purity silicon nitride powder

1985-04-15

1986-04-15

Rosenberg, Peter D.

Chemistry of inorganic compounds

Silicon or compound thereof

Binary compound

C01B 21068

Patent

active

045826960

ABSTRACT:
This specification teaches a method of making a special purity alpha silicon nitride powder which is free from halogen-containing and metal-containing compounds as trace constituents. The method has the following steps. Tetraethyl orthosilicate (TEOS) is prepared of requisite purity. A fine mist of the TEOS solution is delivered to a heated reaction zone. Ammonia is contacted with the fine mist of TEOS in the reaction zone. A reaction product of this reaction is collected, the reaction product being amorphous silica and carbon black. The reaction product is heated to a temperature in a range of 1300.degree.-1500.degree. C. The heated reaction product is subjected to a nitrogen gas treatment to convert the silica of the reaction product into a special purity alpha silicon nitride powder because of the chemical reactions occurring between the silica, carbon black, and nitrogen. The prepared alpha silicon nitride powder is then recovered.

REFERENCES:
patent: 3855395 (1974-12-01), Cutler
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patent: 4346068 (1982-08-01), Kasai
patent: 4387079 (1983-06-01), Kasai
patent: 4530825 (1985-07-01), Johansson
patent: 4543344 (1985-09-01), Cannady
patent: 4552740 (1985-11-01), Morgan
Zhang & Cannon, "Preparation of Silicon Nitride from Silica," American Ceramic Society, pp. 691-695 (1982).

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