Method for manufacturing integrated dynamic RAM one-transistor s

Details Method for manufacturing integrated dynamic RAM one-transistor s Method for manufacturing integrated dynamic RAM one-transistor s

1981-07-13

1983-07-05

Roy, Upendra

Metal working

Method of mechanical manufacture

Assembling or joining

29576B, 29577C, 148 15, 148187, 357 23, 357 51, 357 91, H01L 2120, B01J 1700, H01L 2704

Patent

active

043910327

ABSTRACT:
Method for manufacturing dynamic RAM one-transistor storage cells in a semiconductor chip with each cell having one integrated field effect transistor and one integrated capacitor. A semiconductor substrate surface is covered in part by a thin oxide layer and in part by a thick oxide structure. The thin oxide layer is subjected to a first ion implantation. A doped polycrystalline semiconductor material is deposited over the entire surface. The polycrystalline layer is structured by means of a photoresist mask and the underlying layers at the open places etched away to expose substrate surface. The mask is removed. A second thin oxide layer is created by oxidation over the entire surface. A second ion implantation implants ions in the second oxide layer. A second doped layer of polycrystalline material is deposited over the second layer. The second polycrystalline layer is structured by a suitable phototechnique to produce a polycrystalline structure semiconductor layer.

REFERENCES:
patent: 4055444 (1977-10-01), Rao
patent: 4125933 (1978-11-01), Baldwin et al.
patent: 4208670 (1980-06-01), Hoffmann et al.
patent: 4240092 (1980-12-01), Kuo
patent: 4240195 (1980-12-01), Clemens et al.
patent: 4249194 (1981-02-01), Rogers
patent: 4265685 (1981-05-01), Seki

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