Capacitor built-in semiconductor integrated circuit and process

Details Capacitor built-in semiconductor integrated circuit and process Capacitor built-in semiconductor integrated circuit and process

1986-01-29

1988-04-12

Carroll, J.

357 236, 357 59, 357 65, 357 68, H01L 2702, H01L 2348

Patent

active

047378387

ABSTRACT:
A semiconductor integrated circuit comprising a capacitor device including a first conductive layer on a semiconductor substrate, an insulating layer on the first conductive layer and a second conductive layer of polysilicon on the insulating layer, an outer insulating layer covering the second conductive layer and formed with a plurality of openings each of which extends to the surface of the second conductive layer, and a metal layer formed on the outer insulating layer, the metal layer having portions contacting the second conductive layer respectively through the openings in the outer insulating layer.

REFERENCES:
patent: 4285001 (1981-08-01), Gerzberg et al.
patent: 4419812 (1983-12-01), Topich

Affiliated with

Also associated with

Rating

Capacitor built-in semiconductor integrated circuit and process does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Capacitor built-in semiconductor integrated circuit and process , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Capacitor built-in semiconductor integrated circuit and process will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1432816