Read only memory semiconductor device

Details Read only memory semiconductor device Read only memory semiconductor device

1986-10-16

1988-04-12

Carroll, J.

357 239, 357 54, 357 59, 357 71, H01L 2978, H01L 2934, H01L 2348

Patent

active

047378352

ABSTRACT:
A read only memory contains a conductive layer of polysilicon which contacts the drains of memory cell MOS transistors and lies near and on a gate electrode. A data line made of aluminum and the drain of the MOS transistors are interconnected through the conductive layer. A method of manufacturing the ROM such structure is also disclosed.

REFERENCES:
patent: 4291322 (1981-09-01), Clemens et al.
patent: 4324238 (1982-04-01), Chang et al.
patent: 4403394 (1983-09-01), Shepard et al.
patent: 4558343 (1985-12-01), Ariizumi et al.
patent: 4624959 (1986-09-01), Nakagawa
patent: 4649412 (1987-03-01), Iwase et al.
"Late Implant Turns ROMs Around Fast," Electronics, May 31, 1983, R. Beresford, pp. 50-51.

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