Solid-state color image pickup device with accumulated-layer str

Details Solid-state color image pickup device with accumulated-layer str Solid-state color image pickup device with accumulated-layer str

1986-02-19

1988-04-12

Edlow, Martin H.

Facsimile and static presentation processing

Facsimile

Specific signal processing circuitry

357 30, 357 32, 357 24LR, 358 43, 358 44, 35821311, 35821331, H01L 2714, H01L 3100, H04N 907, H04N 314

Patent

active

047378336

ABSTRACT:
A solid-state image pickup device includes a semiconductor substrate and at least a layer of photosensitive semiconductor having a semiconductor material in which photocarriers are excited with a light incident thereto. The photosensitive semiconductor layer is disposed above one principal surface of the semiconductor substrate and has such a thickness as to allow a portion of the incident light to pass therethrough to the semiconductor substrate. The semiconductor substrate and photosensitive semiconductor layer forms an array of photosensitive areas associated with pixels of a picture. Each of the photosensitive areas includes a connecting element for conducting electric charges from the photosensitive semiconductor layer, a photosensitive region which is formed in the one principal surface of the semiconductor substrate and in which photocarriers are excited with a light incident thereto, a first switching element formed in the one principal surface of the semiconductor substrate and linked to the photosensitive region for producing a signal associated with electric charges in the photosensitive region, a second switching element formed in the one principal surface of the semiconductor substrate and linked to the connecting element for producing a signal associated with electric charges conducted by the connecting element, and an electrode formed on the photosensitive semiconductor layer and being cooperative with the connecting element for establishing an electric field in the photosensitive semiconductor layer substantially in parallel with the principal surface of the photosensitive semiconductor layer.

REFERENCES:
patent: 4404586 (1983-09-01), Tabei
patent: 4438455 (1984-03-01), Tabei
patent: 4443813 (1984-04-01), Tabei
patent: 4472728 (1984-09-01), Grant et al.

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