Semiconductor device having silicon conductor tracks connected b

Details Semiconductor device having silicon conductor tracks connected b Semiconductor device having silicon conductor tracks connected b

1984-08-31

1987-07-14

James, Andrew J.

357 59, 357 71, 357 67, H01L 2904

Patent

active

046806199

ABSTRACT:
Two (polycrystalline) silicon tracks located at a relative distance of the order of submicrons which contact the subjacent semiconductor body with a pn junction formed therein, are connected to each other via a metal silicide track. The resulting shortcircuiting of the pn junction does not influence the operation of the circuit, for example, a memory cell, realized in the semiconductor body. By providing the whole conductor pattern with an oxide layer in which a contact hole is formed at the area of the shortcircuit, the latter can then be provided in a self-aligning manner.

REFERENCES:
patent: 4161745 (1979-07-01), Slob
patent: 4333099 (1982-06-01), Tanguay
patent: 4336550 (1982-06-01), Medwin
patent: 4412239 (1983-10-01), Iwasaki
patent: 4449287 (1984-05-01), Maas
patent: 4476482 (1984-10-01), Scott
patent: 4543595 (1985-09-01), Vora
patent: 4622575 (1986-11-01), Vora et al.

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