Graded extended drain concept for reduced hot electron effect

Details Graded extended drain concept for reduced hot electron effect Graded extended drain concept for reduced hot electron effect

1985-04-12

1987-07-14

James, Andrew J.

357 239, 357 2312, 357 20, 357 90, 357 91, H01L 2978, H01L 2908, H01L 2936

Patent

active

046806032

ABSTRACT:
Hot electron injection into the gate oxides of MOSFET devices imposes limitations on the miniaturization of such devices in VLSI circuits. A buried channel with a graded, buried spacer is provided to guard against hot electron trapping effects while preserving process and structure compatibility with micron or submicron VLSI devices. The channel current is redirected into a buried channel at a distance away from the interface in the vicinity of the drain region where the hot electron effect is most likely to occur.

REFERENCES:
patent: 3936857 (1976-02-01), Ota
patent: 4089712 (1978-05-01), Joy et al.
patent: 4247860 (1981-01-01), Tihanyi
patent: 4366613 (1983-01-01), Ogura et al.
Takeda et al, IEEE Transactions on Electron Devices, vol. EO-29, No. 4, Apr. 1982 pp. 611-618.
"Tighter VLSI Geometries Create Problems with Hot Carriers" by Charles L. Cohen, Electronics, Jul. 15, 1985, pp. 36-37.
Kioyo Watabe, "LDD Structure Using Polysilicon on the Gate Sidewall", Presented at the 45th Japanese Applied Physics Conference, Oct. 12-15, 1984.
T. Wada, M. Nakamura, R. Dang and K. Taniguchi, "A Study of Hot-Carrier Degradation in Optimizing 1 .mu.m LDD-MOSFET Using Device Simulator", Presented at the 45th Japanese Applied Physics Conference, Oct. 12-15, 1984.
Takeda, E. et al., "An As-P (n+-n-) Double Diffused Drain MOSFET for VLSI's", IEEE Transactions on Electron Devices, vol. ED-30 (1983) Jun. No. 6.
Tsang, Paul J. et al., "Fabrication of High-Performance LDDFET's with Oxide Sidewall-Spacer Technology", IEEE Journal of Solid-State Circuits, vol. SC-17 (1982) Apr., No. 2.

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