Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1985-05-22
1987-07-14
Anderson, Bruce C.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
2504411, 414217, H01J 3718
Patent
active
046804749
ABSTRACT:
The implant chamber pressure during ion implantation is controlled within a specified intermediate pressure range higher than the baseline pressure. Implanted dose errors resulting from neutralizing collisions of the beam with residual gas molecules are held constant and can be compensated. The pressure is maintained within the specified intermediate pressure range by a control system including a controllable vacuum valve associated with a vacuum pump, a chamber pressure sensor and a valve controller responsive to the pressure sensor. The valve controller opens and closes the valve to maintain the chamber pressure within the specified range after introduction of a wafer.
REFERENCES:
patent: 4449885 (1984-05-01), Hertel et al.
K. Steeples, "Dose Control with High Power Ion Beams on Photoresist Masked Targets", J. Vac. Sci. Technol. B2(1), Jan.-Mar. 1984, pp. 58-62.
G. Ryding et al., 10th International Conference on Electron and Ion Beam Science and Technology, Montreal (1982), pp. 366-371.
G. Ryding et al., "Dose Control for Ion Implantation", Microelectronic Manufacturing and Testing", Feb. 1983, pp. 17-19.
G. Ryding, Poceedings of the Fourth International Conference on Ion Implantation Equipment and Techniques, Springer Verlag (1983), pp. 274-290.
Pollock John D.
Turner Norman L.
Anderson Bruce C.
Berman Jack I.
Cole Stanley Z.
McClellan William R.
Varian Associates Inc.
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