SCR structure for fast turn-on switching

Details SCR structure for fast turn-on switching SCR structure for fast turn-on switching

1989-12-15

1990-12-18

James, Andrew J.

357 44, 357 39, 357 46, H01L 2974

Patent

active

049790110

ABSTRACT:
A latching switch having a vertical and lateral PNP connected in parallel with each other and having their bases connected to the collectors of parallel connected vertical and lateral NPN transistors and having their collectors connected to the bases of the NPN transistors. The PNP emitters form the anode, the PNP bases form the anode gate, the NPN bases form the cathode gate and the NPN emitters form the cathode of the latching switch. The integration in a planar process is achieved by having N and P wells contiguous at a first boundary and providing the appropriate base and emitter regions in the appropriate well to produce the interconnected vertical NPN and PNP transistors. Some embodiments minimize and virtually eliminate the lateral transistors while maintaining integrated connection.

REFERENCES:
patent: 4635087 (1987-01-01), Birrittella et al.
patent: 4677455 (1987-06-01), Okajima

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