Heterojunction bipolar transistor

Details Heterojunction bipolar transistor Heterojunction bipolar transistor

1989-09-29

1990-12-18

Carroll, J.

357 4, 357 16, H01L 29261, H01L 2972, H01L 2712, H01L 29205

Patent

active

049790099

ABSTRACT:
2A heterojunction bipolar transistor is disclosed in which a region of a base layer which extends in the vicinity of the interface between the base layer and an emitter layer is doped with an impurity at a higher concentration than that in the inside of the base layer to thereby form a built-in field by which carriers injected from the emitter are caused to drift to the inside of the base layer. In the transistor having this structure, the current gain does not depend on the emitter area, and it is possible to obtain a large current gain with a small emitter area.

REFERENCES:
patent: 4811070 (1989-03-01), Hayashi et al.

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