Vertical isolated-collector transistor of the pnp type incorpora

Details Vertical isolated-collector transistor of the pnp type incorpora Vertical isolated-collector transistor of the pnp type incorpora

1989-01-18

1990-12-18

Wojciechowicz, Edward J.

357 35, 357 42, 357 48, 357 86, H01L 2972

Patent

active

049790080

ABSTRACT:
A vertical, isolated-collector transistor of the pnp type comprises an island doped similarly to the collector region and formed in the surface epitaxial layer of the transistor between that collector region and one of the isolation zones. That island extends in depth to penetrate a similarly doped intermediate region and short out the epitaxial layer included between the isolating layer and the collector region so as to suppress the effects of active parasitic junction components by holding a transistor and a silicon-controlled rectifier of parasitic types, as nesting within the structure of the vertical pnp transistor, in a cut-off state.

REFERENCES:
patent: 4476480 (1984-10-01), Fuse
patent: 4684970 (1987-08-01), Sloane et al.
patent: 4807009 (1989-02-01), Fushimi et al.

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