Plasma deposited coatings, and low temperature plasma method of

Coating processes – Electrical product produced – Integrated circuit – printed circuit – or circuit board

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437234, B05D 306

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active

047373792

ABSTRACT:
A method of depositing a substantially hydrogen free or controlled hydrogen content multi-element alloy film on a substrate. The method utilizes a microwave excited plasma of a hydrogen free precursor gas to deposit a hard, adherent coating. The method comprises providing a substrate to be coated in a vacuum deposition chamber, with a source of microwave energy coupled to the vacuum deposition chamber. A substantially hydrogen free reaction gas precursor composition is introduced into the reaction chamber at a pressure corresponding substantially to a pressure minimum of the modified Paschen curve for the reaction gas precursor composition. Activation of the source of microwave energy excites the reaction gas precursor composition, in this way forming a plasma in the vacuum deposition chamber to deposit a substantially hydrogen free or controlled hydrogen content multi-element alloy film on the substrate.

REFERENCES:
patent: 4340617 (1982-07-01), Deutsch et al.
patent: 4657777 (1987-04-01), Hirooka et al.
patent: 4689093 (1987-08-01), Ishihara et al.

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