Internally regulated power voltage circuit for MIS semiconductor

Details Internally regulated power voltage circuit for MIS semiconductor Internally regulated power voltage circuit for MIS semiconductor

1983-11-30

1986-04-29

Anagnos, Larry N.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307200B, 307443, 307475, 323281, 323284, 323317, 323316, 365226, G05F 1575, G05F 308, H03K 19003, H03K 19094

Patent

active

045859558

ABSTRACT:
A MIS semiconductor integrated circuit is one which contains an internal circuit. In the internal circuit, an externally supplied power source voltage supplied to a power source voltage terminal is supplied to the voltage input terminal of a voltage dropping circuit. The voltage at a voltage output terminal of the voltage dropping circuit is detected by a voltage detecting circuit containing an inverting circuit with a predetermined threshold voltage. The voltage dropping circuit is switch-controlled by applying the detected voltage to the control terminal thereof. The voltage output terminal of the voltage dropping circuit provides an internal power source voltage which is formed by dropping the externally supplied power source voltage. An internal circuit containing MOSFETs with an effective channel length of 1 .mu.m or less is driven by the internal power source voltage.

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Patent Abstracts of Japan, vol. 7, No. 233 (E-204) (1378), Oct. 15, 1983 and JP-A-58 121 664 (Nippon Denki K.K.) (7-20-1983).
Dennard et al, "1 .mu.m MOSFET VLSI Technology: Part II"; IEEE-JSSC, vol. SC-14, No. 2, pp. 247-254; 4/1979.
Malaviya, "Regulated On-Chip Reference Generator for Logic Families"; IBM-TDB; vol. 18, No. 5; pp. 1418-1419; 10/1975.
Jaeger, "Regulated Power Supply for MTL Integrated Circuits"; IBM-TDB; vol. 18, No. 4, pp. 1220-1222; 9/1975.

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