Magnetoresistor

Electrical resistors – Resistance value responsive to a condition – Magnetic field or compass

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357 27, H01L 4300

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active

049789384

ABSTRACT:
A magnetoresistive sensor that includes a very thin film of monocrystalline semiconductive material, having at least a moderate carrier mobility and no greater than a moderate carrier density. The device includes means for inducing or enhancing an accumulation layer adjacent the film outer surface. With film thicknesses below 5 micrometers, preferably below 3 micrometers, the presence of the accumulation layer can have a very noticeable effect. The unexpected improvement provides a significant apparent increase in mobility and conductivity of the semiconductive material, and an actual increase in magnetic sensitivity and temperature insensitivity. A method for making the sensor is also described.

REFERENCES:
patent: 3898359 (1975-08-01), Nadkerni
patent: 4224594 (1980-09-01), Anthony et al.
S. Kataoka, "Recent Developments of Magnetoresistive Devices and Applications," Circulars of the Electrotechnical Laboratory No. 182, Agency of Industrial Science and Technology, Tokyo (Dec. 1974).
H. H. Wieder, "Transport Coefficients of Indium Arsenide Epilayers," Applied Physics Letters, vol. 25, No. 4, pp. 206-208 (Aug. 15, 1974).
G. Burns, Solid State Physics Sections 18-5 and 18-6, pp. 726-747, Academic Press, Inc., Harcourt Brace Jovanovich, Publishers, New York, 1985.
H. P. Baltes and R. S. Popovic, "Integrated Semiconductor Magnetic Field Sensors," Proceedings of the IEEE, vol. 74, No. 8, pp. 1107-1132 (Aug. 1986).
S. Kalem, J.-I. Chyi and H. Morkoc, "Growth and Transport Properties of InAs Epilayers on GaAs," Applied Physics Letters, vol. 53, No. 17, pp. 1647-1649 (Oct. 24, 1988).

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