Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Patent
1997-06-26
1998-12-29
Wallace, Valencia Martin
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
257208, 257209, 257528, H01L 2710, H01L 2900
Patent
active
058545107
ABSTRACT:
Disclosed is a semiconductor fuse structure having a low power programming threshold and anti-reverse engineering characteristics. The fuse structure includes a substrate having a field oxide region. A polysilicon strip that has an increased dopant concentration region lies over the field oxide region. The fuse structure further includes a silicided metallization layer having first and second regions lying over the polysilicon strip. The first region has a first thickness, and the second region has a second thickness that is less than the first thickness and is positioned substantially over the increased dopant concentration region of the polysilicon strip. Preferably, the first region of the silicided metallization layer has a first side and a second side located on opposite sides of the second region, and the resulting fuse structure is substantially rectangular in shape. Therefore, the semiconductor fuse structure can be programmed by breaking the second region.
REFERENCES:
patent: 3792319 (1974-02-01), Tsang
patent: 4042950 (1977-08-01), Price
patent: 5025298 (1991-06-01), Fay et al.
L. Van Den Hove, "Advanced Interconnection and Contact Schemes Based on TiSi.sub.2 and CoSi.sub.2 : Relevant Materials Issues and Technological Implementation", Katholieke Universiteit Leuven, IMEC, pp. 144-153, Jun. 1988.
Bothra Subhas
Lin Xi-Wei
Manley Martin H.
Payne Robert
Sur, Jr. Harlan Lee
Martin Wallace Valencia
VLSI Technology Inc.
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