Method of making a metal-oxide-semiconductor device having shall

Details Method of making a metal-oxide-semiconductor device having shall Method of making a metal-oxide-semiconductor device having shall

1989-09-21

1990-12-18

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 40, 437 41, 437162, 437 27, 437 46, 437152, 437913, H01L 2978

Patent

active

049786296

ABSTRACT:
A MOS transistor comprises source and drain impurity regions on a surface of a silicon substrate. The source and drain regions have a double diffusion structure including impurity regions of high concentration and impurity regions of low concentration surrounding the high-concentration impurity regions. Outgoing electrode layers of polysilicon are formed on surfaces of the source and drain impurity regions. A gate electrode is formed to partially extend over the outgoing electrode layers for the source and drain impurity regions. The source and drain impurity regions are formed by implanting impurities into the electrode layers and subsequently diffusing the impurities into the semiconductor substrate by thermal diffusion. Those processes of impurity implantation and thermal diffusion are effected after completion of the step of patterning the gate electrode. Since thermal diffusion of the impurity implantation for the source and drain regions occurs as a final heat treatment step in the process, the depth of the impurity implanted regions can be precisely controlled.

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